s mhop microelectronics c orp. a STM4633 symbolv ds v gs i dm w a p d c 2.5 -55 to 150 i d units parameter -30 -7 -40 vv 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max -30v -7.0a 52 @ vgs=-4.5v 33 @ vgs=-10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg ver 1.0 www.samhop.com.tw aug,13,2008 1 details are subject to change without notice. t a =25 c r ja thermal resistance, junction-to-ambient a c/w 50 esd protected. p-channel enhancement mode field effect transistor e as single pulse avalanche energy d mj t a =70 c -5.6 a 20 t a =70 c 1.6 w s o-8 1 4 3 2 1 d d d d gs s 5 6 7 8 s
symbol min typ max units bv dss -30 v -1 i gss 10 ua v gs(th) -1 v 26 g fs 9.5 s v sd c iss 811 pf c oss 215 pf c rss 125 pf q g 12.5 nc 18 nc q gs 60 nc q gd 10.4 t d(on) 15 ns t r 1.65 ns t d(off) 4.2 ns t f ns gate-drain charge v ds =-15v,v gs =0v switching characteristics gate-source charge v dd =-15v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-15v,i d =-7a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-7a v ds =-15v , i d =-7a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-5.6a 39 m ohm c f=1.0mhz c v ds =-15v,i d =-7a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1.7a -0.77 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ STM4633 ver 1.0 www.samhop.com.tw aug,13,2008 2 nc v ds =-15v,i d =-7a,v gs =-4.5v 7.4 _ -1.7 33 52 i s maximum continuous drain-source diode forward current -1.7 a b
STM4633 ver 1.0 www.samhop.com.tw aug,13,2008 3 t j ( c ) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 2520 15 10 50 0 0.5 1 1.5 2 2.5 3 v g s =-3.5v v g s =-4.5v v g s =-10v v g s =-3v v g s =-4v 15 96 3 0 0 0.8 1.6 2.4 3.2 4.0 4.8 t j=125 c 12 25 c -55 c 60 50 40 30 20 10 1 5 10 15 20 25 1 v g s =-10v v g s =-4.5v 1.0 0 25 50 75 150 100 125 v g s =-10v i d =-7a 0 1.1 1.2 1.3 1.4 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua v g s =-4.5v i d =-5.6a
STM4633 ver 1.0 www.samhop.com.tw aug,13,2008 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area 120100 8060 40 20 0 2 4 6 8 10 0 i d =-7a 25 c 75 c 125 c 1200 1000 800 600 400 200 0 c is s c os s c rs s 0 5 10 15 20 25 30 10 8 6 42 0 0 2 4 6 8 10 12 14 16 v ds =-15v i d =-7a 125 c 75 c 25 c 20.0 10.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 5.0 1 10 100 100 10 1 1000 vds=-15v,id=-1a vgs=-10v td(on) tr td(off) tf 100 10 1 0.1 0.1 1 10 30 100 v g s =-10v s ingle p uls e t a =25 c r ds ( o n ) l imit dc 1s 100ms 1 0ms 1 m s 10 0us
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM4633 ver 1.0 www.samhop.com.tw aug,13,2008 5 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 10 100 1000 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t ) 4. duty c ycle, d=t 1 /t 2 th th th single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1
STM4633 ver 1.0 www.samhop.com.tw aug,13,2008 6 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45
STM4633 www.samhop.com.tw aug,13,2008 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 ver 1.0 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 n w m s k h g v r
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